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MITSUBISHI Nch POWER MOSFET
FS10VSJ-2
HIGH-SPEED SWITCHING USE
FS10VSJ-2
OUTLINE DRAWING
1.5MAX.
Dimensions in mm
r
10.5MAX.
4.5 1.3
1.5MAX. 8.6 0.3 9.8 0.5
3.0 +0.3 -0.5
0 -0
+0.3
1 5 0.8
B
0.5
qwe wr
2.6 0.4
4V DRIVE VDSS ............................................................................... 100V rDS (ON) (MAX) ............................................................. 0.19 ID ........................................................................................ 10A Integrated Fast Recovery Diode (TYP.) ............ 95ns
q
q GATE w DRAIN e SOURCE r DRAIN e
TO-220S
APPLICATION Motor control, Lamp control, Solenoid control DC-DC converter, etc.
MAXIMUM RATINGS
Symbol VDSS VGSS ID IDM IDA IS ISM PD Tch Tstg --
(Tc = 25C)
Parameter Drain-source voltage Gate-source voltage Drain current Drain current (Pulsed) Avalanche drain current (Pulsed) Source current Source current (Pulsed) Maximum power dissipation Channel temperature Storage temperature Weight Typical value VGS = 0V VDS = 0V
Conditions
Ratings 100 20 10 40 10 10 40 30 -55 ~ +150 -55 ~ +150 1.2
4.5
Unit V V A A A A A W C C g
Feb.1999
L = 100H
(1.5)
MITSUBISHI Nch POWER MOSFET
FS10VSJ-2
HIGH-SPEED SWITCHING USE
ELECTRICAL CHARACTERISTICS
Symbol V (BR) DSS IGSS IDSS VGS (th) rDS (ON) rDS (ON) VDS (ON) yfs Ciss Coss Crss td (on) tr td (off) tf VSD Rth (ch-c) trr Parameter Drain-source breakdown voltage Gate-source leakage current Drain-source leakage current Gate-source threshold voltage
(Tch = 25C)
Test conditions ID = 1mA, VGS = 0V VGS = 20V, VDS = 0V VDS = 100V, VGS = 0V ID = 1mA, VDS = 10V ID = 5A, VGS = 10V ID = 5A, VGS = 4V ID = 5A, VGS = 10V ID = 5A, VDS = 5V VDS = 10V, VGS = 0V, f = 1MHz
Limits Min. 100 -- -- 1.0 -- -- -- -- -- -- -- -- -- -- -- -- -- -- Typ. -- -- -- 1.5 0.14 0.16 0.70 13 800 125 45 14 15 65 40 1.0 -- 95 Max. -- 0.1 0.1 2.0 0.19 0.21 0.95 -- -- -- -- -- -- -- -- 1.5 4.17 --
Unit V A mA V V S pF pF pF ns ns ns ns V C/W ns
Drain-source on-state resistance Drain-source on-state resistance Drain-source on-state voltage Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Source-drain voltage Thermal resistance Reverse recovery time
VDD = 50V, ID = 5A, VGS = 10V, RGEN = RGS = 50
IS = 5A, VGS = 0V Channel to case IS = 10A, dis/dt = -100A/s
PERFORMANCE CURVES
POWER DISSIPATION DERATING CURVE 50
POWER DISSIPATION PD (W) DRAIN CURRENT ID (A)
MAXIMUM SAFE OPERATING AREA 5 3 2 101 7 5 3 2 100 7 5 3 2 10-1 7 5
tw = 10ms 100ms 1ms 10ms DC
40
30
20
10
TC = 25C Single Pulse
0
0
50
100
150
200
2 3 5 7 100 2 3 5 7 101 2 3 5 7 102 2 DRAIN-SOURCE VOLTAGE VDS (V) OUTPUT CHARACTERISTICS (TYPICAL)
CASE TEMPERATURE TC (C) OUTPUT CHARACTERISTICS (TYPICAL) 20
TC = 25C Pulse Test VGS = 10V 6V 5V 4V
10
TC = 25C Pulse Test
VGS = 10V 6V 5V 4V 3V
DRAIN CURRENT ID (A)
16
DRAIN CURRENT ID (A)
8
12
3V
6
2.5V
8
PD = 30W
4
4
2
2V
0
0
1.0
2.0
3.0
4.0
5.0
0
0
0.4
0.8
1.2
1.6
2.0
DRAIN-SOURCE VOLTAGE VDS (V)
DRAIN-SOURCE VOLTAGE VDS (V)
Feb.1999
MITSUBISHI Nch POWER MOSFET
FS10VSJ-2
HIGH-SPEED SWITCHING USE
ON-STATE VOLTAGE VS. GATE-SOURCE VOLTAGE (TYPICAL) 5.0
TC = 25C Pulse Test
ON-STATE RESISTANCE VS. DRAIN CURRENT (TYPICAL) 0.5
TC = 25C Pulse Test
DRAIN-SOURCE ON-STATE VOLTAGE VDS (ON) (V)
DRAIN-SOURCE ON-STATE RESISTANCE rDS (ON) ()
4.0
0.4
3.0
ID = 15A
0.3
VGS = 4V
2.0
10A
0.2
10V
1.0
5A
0.1 0 10-1 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102 DRAIN CURRENT ID (A)
0
0
2
4
6
8
10
GATE-SOURCE VOLTAGE VGS (V)
TRANSFER CHARACTERISTICS (TYPICAL) 20
Tc = 25C VDS = 10V Pulse Test
FORWARD TRANSFER ADMITTANCE VS.DRAIN CURRENT (TYPICAL) 102 7 5 4 3 2
TC = 25C VDS = 5V Pulse Test
DRAIN CURRENT ID (A)
12
FORWARD TRANSFER ADMITTANCE yfs (S)
16
8
4
101 7 5 4 3 2
75C 125C
0
0
2
4
6
8
10
100 0 10
2 3 4 5 7 101
2 3 4 5 7 102
GATE-SOURCE VOLTAGE VGS (V)
DRAIN CURRENT ID (A)
CAPACITANCE VS. DRAIN-SOURCE VOLTAGE (TYPICAL) 104 7 5 3 2 103 7 5 3 2 102 7 5 3 Tch = 25C 2 f = 1MHZ 101
VGS = 0V Ciss
SWITCHING CHARACTERISTICS (TYPICAL) 102 7 5 4 3 2 101 7 5 4 3 2 100 0 10 2 3 4 5 7 101
td(off) tf
SWITCHING TIME (ns)
CAPACITANCE Ciss, Coss, Crss (pF)
tr td(on)
Coss Crss
Tch = 25C VDD = 50V VGS = 10V RGEN = RGS = 50
3 5 7 100 2 3 5 7 101 2 3 5 7 102 2 3 DRAIN-SOURCE VOLTAGE VDS (V)
2 3 4 5 7 102
DRAIN CURRENT ID (A)
Feb.1999
MITSUBISHI Nch POWER MOSFET
FS10VSJ-2
HIGH-SPEED SWITCHING USE
GATE-SOURCE VOLTAGE VS.GATE CHARGE (TYPICAL)
GATE-SOURCE VOLTAGE VGS (V)
SOURCE-DRAIN DIODE FORWARD CHARACTERISTICS (TYPICAL) 40
SOURCE CURRENT IS (A)
VGS = 0V Pulse Test
10
Tch = 25C ID = 10A VDS = 20V
8
32
6
50V 80V
24
4
16
TC = 125C
2
8
75C 25C
0
0
4
8
12
16
20
0
0
0.4
0.8
1.2
1.6
2.0
GATE CHARGE Qg (nC)
SOURCE-DRAIN VOLTAGE VSD (V)
DRAIN-SOURCE ON-STATE RESISTANCE rDS (ON) (25C)
DRAIN-SOURCE ON-STATE RESISTANCE rDS (ON) (tC)
ON-STATE RESISTANCE VS. CHANNEL TEMPERATURE (TYPICAL) 101 7 VGS = 10V ID = 1/2ID 5 Pulse Test 4 3 2 100 7 5 4 3 2 10-1 -50 0 50 100 150 4.0
GATE-SOURCE THRESHOLD VOLTAGE VGS (th) (V)
THRESHOLD VOLTAGE VS. CHANNEL TEMPERATURE (TYPICAL)
VDS = 10V ID = 1mA
3.2
2.4
1.6
0.8
0
-50
0
50
100
150
CHANNEL TEMPERATURE Tch (C)
CHANNEL TEMPERATURE Tch (C)
DRAIN-SOURCE BREAKDOWN VOLTAGE V (BR) DSS (25C)
TRANSIENT THERMAL IMPEDANCE Zth (ch - c) (C/ W)
DRAIN-SOURCE BREAKDOWN VOLTAGE V (BR) DSS (tC)
BREAKDOWN VOLTAGE VS. CHANNEL TEMPERATURE (TYPICAL) 1.4
VGS = 0V ID = 1mA
TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS 102 7 5 3 2 101 7 5 3 2 100 7 5 3 2
1.2
1.0
D = 1.0 0.5 0.2
tw
0.8
PDM 0.1 0.05 0.02 0.01 Single Pulse
T D= tw T
0.6
0.4
-50
0
50
100
150
10-1 -4 10 2 3 5710-3 2 3 5710-22 3 5710-12 3 57100 2 3 57101 2 3 57102 PULSE WIDTH tw (s)
Feb.1999
CHANNEL TEMPERATURE Tch (C)

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